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 H V SC AV ER OM AI SIO PL LA N IA BL S NT E
TISP8250D UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR
*R o
TISP8250D Overvoltage and Overcurrent Protector
Telecommunication System 30 A 10/1000 Protector Ion-Implanted Breakdown Region - Precise and Stable Voltage
Device Name TISP8250D VDRM V 250 V(BO) V 340
8-SOIC Package (Top View)
G NC NC K
1 2 3 4
8 7 6 5
A A A A
MD8XAAA
NC - No internal connection
Rated for International Surge Wave Shapes
Wave Shape 2/10 0.5/700 10/700 10/1000 Standard GR-1089-CORE CNET I 31-24 ITU-T K.20/21 GR-1089-CORE IPPSM A 75 40 40 30
Device Symbol
A
Functional Replacement for TPP25011 .............................................. UL Recognized Component
G
SD8XAA
K
Description
The TISP8250D is a P-gate reverse-blocking thyristor (SCR) designed for the protection of telecommunications equipment against overvoltages and overcurrents on the telephone line caused by lightning, a.c. power contact and induction. The fixed voltage and current triggered modes make the TISP8250D particularly suitable for the protection of ungrounded customer premise equipment. Connected across the d.c. side of a telephone set polarity bridge, in fixed voltage mode these devices can protect the ringer in the on-hook condition. In an off-hook condition, either the fixed voltage or current triggered modes can protect the following telephone electronics. Without external gate activation, the TISP8250D is a fixed voltage protector. The maximum working voltage without clipping is 250 V and the protection voltage is 340 V. Lower values of protection voltage may be set by connecting an avalanche breakdown diode of less than 250 V between the TISP8250D gate and anode (see Figure 2.) By connecting a small value resistor in series with the line conductor and connecting the TISP8250D gate cathode terminals in parallel with the resistor, conductor overcurrents can gate trigger the TISP8250D into conduction. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. Overcurrents develop sufficient voltage across the external gate-cathode resistor to trigger the device into a low-voltage on state. This low-voltage on state causes the current resulting from the overstress to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.
How To Order
For Standard Termination Finish Order As TISP8250DR TISP8250D For Lead Free Termination Finish Order As TISP8250DR-S TISP8250D-S 8250 Marking Code Standard Quantity 2500 1500
Device TISP8250D
Package 8-SOIC
Carrier Embossed Tape Reeled Tube
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex JULY 2000 - REVISED MARCH 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP8250D Overvoltage and Overcurrent Protector
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating Repetitive peak off-state voltage (see Note 1) Non-repetitive peak impulse current (see Notes 2, 3 and 4) 2/10 s (Telcordia GR-1089-CORE, 2/10 s waveshape) 0.2/310 (CNET I 31-24, 0.5/700 s waveshape) 5/310 s (ITU-T K.20/21, 10/700 s voltage waveshape) 5/310 s (FTZ R12, 10/700 s voltage waveshape) 10/1000 s (Telcordia GR-1089-CORE, 10/1000 s voltage waveshape) Non-repetitive peak on-state current, 50 Hz (see Notes 2, 3 and 4) 10 ms half sine wave 1s rectified sine wave 1000 s rectified sine wave Junction temperature Storage temperature range NOTES: 1. 2. 3. 4. ITSM TJ Tstg 5 3.5 0.7 -40 to +150 -65 to +150 A 75 40 40 40 30 Symbol VDRM Value 250 Unit V
IPPSM
A
C C
For voltage values at lower temperatures, derate at 0.13 %/C. Initially the device must be in thermal equilibrium, with TJ = 25 C. The surge may be repeated after the device returns to its initial conditions. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A printed wiring track widths. Derate current values at -0.61 %/C for ambient temperatures above 25 C.
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
Parameter IDRM V(BO) I(BO) IH VGK IGT ID CO Repetitive peak off-state current Breakover voltage Breakover current Holding current Gate-cathode voltage Gate trigger current Off-state current Off-state capacitance VD = VDRM dv/dt = 250 V/ms, RSOURCE = 300 dv/dt = 250 V/ms, RSOURCE = 300 IT = 5 A, di/dt = -30 mA/ms IG = 30 mA VAK = 100 V VD = 60 V f = 1 MHz, Vd = 1 V rms, VD = 5 V 15 180 0.6 1.2 40 5 100 Test Conditions TA = 25 C TA = 85 C Min Typ Max Unit 5 10 340 A V mA V mA A pF
200 mA
Thermal Characteristics, TA = 25 C (Unless Otherwise Noted)
Parameter RJA NOTE Junction to ambient thermal resistance Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000) (see Note 5) Min Typ Max Unit
170 C/W
5. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5A rated printed wiring track widths.
JULY 2000 - REVISED MARCH 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP8250D Overvoltage and Overcurrent Protector
Parameter Measurement Information
+i Quadrant I Anode Positive Switching Characteristic
V(BO) IH I(BO)
ID -v
IDRM
VD
VDRM
+v
Quadrant III Anode Negative Reverse Characteristic
PM8XAAA
-i
Figure 1. Voltage-Current Characteristic for A and K Terminals All Measurements are Referenced to the K Terminal
Avalanche diode V(BR) < 250 V G
A TISP8250D K
AI8XACAa
Figure 2. Overvoltage Protection Circuit
JULY 2000 - REVISED MARCH 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
Bourns Sales Offices Region The Americas: Europe: Asia-Pacific: Phone +1-951-781-5500 +41-41-7685555 +886-2-25624117 Fax +1-951-781-5700 +41-41-7685510 +886-2-25624116
Technical Assistance Region The Americas: Europe: Asia-Pacific: Phone +1-951-781-5500 +41-41-7685555 +886-2-25624117 Fax +1-951-781-5700 +41-41-7685510 +886-2-25624116
www.bourns.com
Bourns(R) products are available through an extensive network of manufacturer's representatives, agents and distributors. To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area.
Reliable Electronic Solutions
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
COPYRIGHT(c) 2004, BOURNS, INC. LITHO IN U.S.A. e 12/04/TSP0410


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